IPD60R1K4C6 datasheet

Маркировка

IPD60R1K4C6
Производитель

Infineon Technologies
Описание

Infineon Technologies IPD60R1K4C6 Continuous Drain Current: 3.2 A Current - Continuous Drain (id) @ 25?° C: 3.2A Drain To Source Voltage (vdss): 600V Drain-source Breakdown Voltage: 650 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 9.4nC @ 10V Gate-source Breakdown Voltage: 20 V Id(max) @ Tc=25?°c: 3.2 A Idpuls (max): 8.0 A Input Capacitance (ciss) @ Vds: 200pF @ 100V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package: DPAK (TO-252) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packages: PG-TO252-3 Power - Max: 28.4W Power Dissipation: 28.4 W Rds On (max) @ Id, Vgs: 1.4 Ohm @ 1.1A, 10V Rds(on) @ Tj=25?°c Vgs=10: 1,400.0 mOhm Resistance Drain-source Rds (on): 1.26 Ohms Series: CoolMOS?„? Transistor Polarity: N-Channel Vds (max): 600.0 V Vgs(th) (max) @ Id: 3.5V @ 90?µA RoHS: yes Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 1.26 Ohms Part # Aliases: IPD60R1K4C6BTMA1 IPD60R1K4C6XT SP000799134 Other Names: IPD60R1K4C6TR
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14 шт.
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